دیتاشیت NTB30N20T4G
مشخصات دیتاشیت
| نام دیتاشیت |
NTB30N20
|
| حجم فایل |
80.301
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
200V
-
Current - Continuous Drain (Id) @ 25°C:
30A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
81mOhm @ 15A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
100nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
2335pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
2W (Ta), 214W (Tc)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
D2PAK
-
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
Base Part Number:
NTB30
-
detail:
N-Channel 200V 30A (Ta) 2W (Ta), 214W (Tc) Surface Mount D2PAK
